Phosphate Doping into Monoclinic BiVO4 for Enhanced Photoelectrochemical Water Oxidation Activity

被引：482
作者：
Jo, Won Jun [1 ,2 ]
Jang, Ji-Wook [1 ,2 ]
Kong, Ki-jeong [3 ]
Kang, Hyun Joon [1 ,2 ]
Kim, Jae Young [1 ,2 ]
Jun, Hwichan [1 ,2 ]
Parmar, K. P. S. [1 ,2 ]
Lee, Jae Sung [1 ,2 ]
机构：
[1] Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol POSTECH, Div Adv Nucl Engn, Pohang 790784, South Korea
[3] Korea Inst Chem Technol, Taejon 305343, South Korea
来源：
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2012年 / 51卷 / 13期
关键词：
bismuth; doping; phosphates; photolysis; vanadates; AG-LOADED BIVO4; PHOTOCATALYTIC PROPERTIES; SEMICONDUCTOR; DEGRADATION; COMPOSITE;
D O I：
10.1002/anie.201108276
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A monoclinic BiVO 4 lattice was doped with phosphate to enhance photoelectrochemical and photocatalytic water oxidation activity under visible light by a factor of about 30 compared with pristine BiVO 4. Electrochemical impedance spectroscopy measurements and density functional calculations revealed that much improved charge transfer characteristics of BiVO 4 are mainly responsible for the greatly enhanced photoelectrochemical activity. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：3147 / 3151
页数：5
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