CF4 plasma etching of Ta-Al alloy thin films

被引：0

作者：

Shin, SH ^{[1
]}

Chung, YS ^{[1
]}

Auh, KH ^{[1
]}

机构：

[1] Hanyang Univ, Dept Ceram Engn, Seoul 133791, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING SERVING SOCIETY | 1998年

关键词：

D O I：

10.1016/B978-044482793-7/50075-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reactive ion etching(RIE) of Ta-Al alloy thin film with the thickness of 1000 Angstrom was studied. It was confirmed that CF4 gas could be effectively used to etch the Ta-Al alloy thin film. The etching rate of the thin film which the molar ratio is 1:1 is about 67 Angstrom/min. The etching rate of the SiO2 layer was 12 times faster than that of the Ta-Al alloy thin film. In addition, it was observed that photoresist of AZ5214 was more useful than Shiepley 1400-27 in RIE with the CF4 gas.

引用

页码：333 / 336

页数：4