Synergistic Effect of Halogen Ions and Shelling Temperature on Anion Exchange Induced Interfacial Restructuring for Highly Efficient Blue Emissive InP/ZnS Quantum Dots

被引：42

作者：

Cui, Zhongjie ^{[1
]}

Mei, Shiliang ^{[1
]}

Wen, Zhuoqi ^{[2
]}

Yang, Dan ^{[1
]}

Qin, Shuaitao ^{[1
]}

Xiong, Zhiyong ^{[2
]}

Yang, Bobo ^{[3
]}

He, Haiyang ^{[1
]}

Bao, Rui ^{[2
]}

Qiu, Yi ^{[1
]}

Chen, Yuanyuan ^{[1
]}

Zhang, Wanlu ^{[1
]}

Xie, Fengxian ^{[1
,4
]}

Xing, Guichuan ^{[5
]}

Guo, Ruiqian ^{[1
,2
,4
,6
]}

机构：

[1] Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R China

[2] Fudan Univ, Acad Engn & Technol, Inst Future Lighting, Shanghai 200433, Peoples R China

[3] Shanghai Inst Technol, Sch Sci, Shanghai 201418, Peoples R China

[4] Zhongshan Fudan Joint Innovat Ctr, Zhongshan 528437, Peoples R China

[5] Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Taipa 999078, Macao, Peoples R China

[6] Fudan Univ, Yiwu Res Inst, Chengbei Rd, Yiwu City 322000, Peoples R China

来源：

SMALL | 2022年 / 18卷 / 15期

基金：

中国国家自然科学基金;

关键词：

anion exchange; blue emissive; halogen ions; InP; ZnS quantum dots; interfaces; LIGHT-EMITTING-DIODES; HIGH-BRIGHTNESS; NANOCRYSTALS; PHOTOLUMINESCENCE; LUMINESCENT;

D O I：

10.1002/smll.202108120

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

InP quantum dots (QDs) have attracted much attention owing to their nontoxic properties and shown great potential in optoelectronic applications. Due to the surface defects and lattice mismatch, the interfacial structure of InP/ZnS QDs plays a significant role in their performance. Herein, the formation of In-S and S-x-In-P-1-(x) interlayers through anion exchange at the shell-growth stage is revealed. More importantly, it is proposed that the composition of interface is dependent on the synergistic effect of halogen ions and shelling temperature. High shelling temperature contributes to the optical performance improvement resulting from the formation of interlayers, besides the thicker ZnS shell. Moreover, the effect relates to the halogen ions where I- presents more obvious enhancement than Br- and Cl-, owing to their different ability to coordinate with In dangling bonds, which are inclined to form In-S and S-x-In-P-1-(x) bonds. Further, the anion exchange under I--rich environment causes a blue-shift of emission wavelength with shelling temperature increasing, unobserved in a Cl-- or Br--rich environment. It contributes to the preparation of highly efficient blue emissive InP/ZnS QDs with emission wavelength of 473 nm, photoluminescence quantum yield of approximate to 50% and full width at half maximum of 47 nm.

引用

页数：8