Physics of switching and memory effects in chalcogenide glassy semiconductors

被引：50
作者：
Bogoslovskiy, N. A. [1 ]
Tsendin, K. D. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2012年 / 46卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
PHASE-CHANGE MATERIALS; CURRENT-VOLTAGE CHARACTERISTICS; LOCAL-STRUCTURE; DEFECT STATES; THIN-FILMS; ELECTRONIC-PROPERTIES; DEEP CENTERS; CHANGE MEDIA; MECHANISM; GE2SB2TE5;
D O I：
10.1134/S1063782612050065
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Switching and memory effects in chalcogenide glassy semiconductors have been known for nearly fifty years. However, the physics of these effects remains unclear. Recent interest in this problem is caused by active developments of a new generation nonvolatile memory based on the chalcogenide glass-crystal phase transition. In this paper, we review the main experimental features of switching and memory effects, review and analyze the models of the switching effect. Consider the main characteristics of phase-change memory cells made of various materials. On these grounds, the main advantages of modern phase-change memory cells are presented in comparison with first-generation memory elements.
引用
收藏
页码：559 / 590
页数：32
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