Effects of Thermal Annealing on La2O3 Gate Dielectric of InGaZnO Thin-Film Transistor

被引：7
作者：
Huang, X. D. [1 ]
Song, J. Q. [2 ]
Lai, P. T. [2 ]
机构：
[1] Southeast Univ, Minist Educ, Key Lab MEMS, Nanjing 210096, Jiangsu, Peoples R China
[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
ECS SOLID STATE LETTERS | 2015年 / 4卷 / 09期
关键词：
Surface roughness - Zinc compounds - Thin film circuits - Gallium compounds - Grain boundaries - Annealing - Gate dielectrics - Thin films - Indium compounds - Lanthanum oxides - Threshold voltage;
D O I：
10.1149/2.0011509ssl
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of thermal annealing on La2O3 gate dielectric of InGaZnO thin-film transistor (TFT) are investigated by varying annealing temperature. Due to densification and enhanced moisture resistance of the La2O3 film, its surface roughness and interface with InGaZnO are improved by the thermal annealing, thus leading to significant improvement in the TFT electrical performance. However, higher-temperature (450 degrees C) annealing deteriorates the dielectric roughness and induces more traps associated with grain boundaries in the La2O3 film. The TFT with an appropriate annealing (350 degrees C) shows the best performance with smallest subthreshold swing (0.276 V/dec), lowest threshold voltage (3.01 V), highest field-effect mobility (23.2 cm(2)/V.s) and largest on-off current ratio (3.52 x 10(8)). (C) 2015 The Electrochemical Society. All rights reserved.
引用
收藏
页码：Q44 / Q46
页数：3
相关论文
共 13 条
[1]   Two-Step Electrical Degradation Behavior in α-InGaZnO Thin-Film Transistor Under Gate-Bias Stress [J].
Chen, Fa-Hsyang ;
Pan, Tung-Ming ;
Chen, Ching-Hung ;
Liu, Jiang-Hung ;
Lin, Wu-Hsiung ;
Chen, Po-Hsueh .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (05) :635-637
[2]   High-Performance a-IGZO Thin-Film Transistor Using Ta2O5 Gate Dielectric [J].
Chiu, C. J. ;
Chang, S. P. ;
Chang, S. J. .
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) :1245-1247
[3]   Impacts of the Thermal Recovery Process on In-Ga-Zn-O (IGZO) TFTs [J].
Choi, Seung-Ha ;
Lim, Myung-Hoon ;
Jung, Woo-Shik ;
Park, Jin-Hong .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (08) :835-837
[4]   High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ZrO2 Gate Dielectric [J].
Gao, Yana ;
Li, Xifeng ;
Chen, Longlong ;
Shi, Jifeng ;
Sun, Xiao Wei ;
Zhang, Jianhua .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (05) :554-556
[5]   Thin-film organic polymer phototransistors [J].
Hamilton, MC ;
Martin, S ;
Kanicki, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) :877-885
[6]   Present status of amorphous In-Ga-Zn-O thin-film transistors [J].
Kamiya, Toshio ;
Nomura, Kenji ;
Hosono, Hideo .
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2010, 11 (04)
[7]   Comparative Study of Device Performance and Reliability in Amorphous InGaZnO Thin-Film Transistors with Various High-k Gate Dielectrics [J].
Lee, In-Kyu ;
Lee, Se-Won ;
Gu, Ja-gyeong ;
Kim, Kwan-Su ;
Cho, Won-Ju .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (06)
[8]   High-Performance a-IGZO TFT With ZrO2 Gate Dielectric Fabricated at Room Temperature [J].
Lee, Jae Sang ;
Chang, Seongpil ;
Koo, Sang-Mo ;
Lee, Sang Yeol .
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (03) :225-227
[9]   Effects of N2-based annealing on the reliability characteristics of tungsten/La2O3/silicon capacitors [J].
Molina, Joel ;
Tachi, Kiichi ;
Kakushima, Kuniyuki ;
Ahmet, Parhat ;
Tsutsui, Kazuo ;
Sugii, Nobuyuki ;
Hattori, Takeo ;
Iwai, Hiroshi .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (05) :G110-G116
[10]   Trap elimination and injection switching at organic field effect transistor by inserting an alkane (C44H90) layer [J].
Ogawa, Satoshi ;
Kimura, Yasuo ;
Niwano, Michio ;
Ishii, Hisao .
APPLIED PHYSICS LETTERS, 2007, 90 (03)
12