Boron distribution in the subsurface region of heavily doped IIb type diamond

被引：33

作者：

Mavrin, B. N. ^{[1
]}

Denisov, V. N. ^{[1
,3
]}

Popova, D. M. ^{[1
]}

Skryleva, E. A. ^{[2
]}

Kuznetsov, M. S. ^{[3
]}

Nosukhin, S. A. ^{[3
]}

Terentiev, S. A. ^{[3
]}

Blank, V. D. ^{[3
]}

机构：

[1] Russian Acad Sci, Inst Spectroscopy, Troitsk 142190, Moscow Region, Russia

[2] Moscow State Inst Steel & Alloys, Moscow 119049, Russia

[3] Technol Inst Superhard & Novel Carbon Mat, Troitsk 142190, Moscow Region, Russia

来源：

PHYSICS LETTERS A | 2008年 / 372卷 / 21期

关键词：

diamond; boron; XPS; Raman spectra;

D O I：

10.1016/j.physleta.2008.02.064

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

For the first time investigations of the boron distribution in the subsurface region of HPHT boron-doped diamond that is promising for applications in electronics were carried out by X-ray photoelectron (XPS) and Raman spectroscopy. It was found from XPS data that the boron content decreased gradually more than one order of magnitude in depth of surface. The first-principle calculations have shown that the Raman polarizability in the crossed polarization configuration should increase considerably with boron doping. The Raman spectra from as-grown and polished surfaces of heavily boron-doped diamond are discussed in the context of theoretical results. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：3914 / 3918

页数：5

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