Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films

被引：10
作者：
Tokuda, Norio [1 ,2 ]
Ogura, Masahiko [2 ]
Matsumoto, Tsubasa [1 ,2 ]
Yamasaki, Satoshi [2 ]
Inokuma, Takao [1 ]
机构：
[1] Kanazawa Univ, Grad Sch Nat Sci & Technol, Kanazawa, Ishikawa 9201192, Japan
[2] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2016年 / 213卷 / 08期
关键词：
chemical vapor deposition; diamond; homoepitaxy; misorientation; surface morphology; CHEMICAL-VAPOR-DEPOSITION; SINGLE-ELECTRON SPIN; ETCH HILLOCKS; SI(111); GROWTH;
D O I：
10.1002/pssa.201600082
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied the influence of misorientation angles and directions of single crystal diamond (111) substrates on the surface morphology of homoepitaxial diamond (111) films grown by microwave plasma-enhanced chemical vapor deposition (CVD) in the anisotropic lateral growth mode. Hillocks were completely suppressed on the diamond (111) films grown by CVD on the substrates with misorientation angles of 2 degrees and 4 degrees, while hillocks were formed on the CVD-grown diamond (111) films on the substrates with misorientation angles of 0 degrees and 1 degrees. In addition, an atomically flat diamond (111) film was grown on the substrate with a misorientation angle of 28 toward the <(1) over bar(1) over bar2 > direction, while rough films were grown on the substrate with a misorientation angle of 2 degrees toward the < 11 (2) over bar > direction. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2051 / 2055
页数：5
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