Novel high-Q bondwire inductor for MMIC

被引：13

作者：

Lee, YG ^{[1
]}

Yun, SK ^{[1
]}

Lee, HY ^{[1
]}

机构：

[1] Ajou Univ, Sch Elect Engn, Paldal Gu, Suwon 442749, South Korea

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel high-Q on-chip inductor using bondwire loops is proposed for low cost and high performance GaAs MMIC. The measured maximum quality factor and the self-resonant frequency are 21.1 (26.5) and 11.3 (17.0) GHz for 3.5 (2.1) nH inductance, respectively. The electrical variations are measured within 5% tolerance. The on-chip bondwire inductor can be effectively used for developing GaAs MMIC with no external inductors.

引用

页码：548 / 551

页数：4

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