Optical gain in Si/SiO2 lattice:: Experimental evidence with nanosecond pulses

被引：156

作者：

Khriachtchev, L

Räsänen, M

Novikov, S

Sinkkonen, J

机构：

[1] Univ Helsinki, Phys Chem Lab, FIN-00014 Helsinki, Finland

[2] Helsinki Univ Technol, Electron Phys Lab, FIN-02015 Espoo, Finland

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 09期

关键词：

D O I：

10.1063/1.1391406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental evidence of population inversion and amplified spontaneous emission was found for Si nanocrystallites embedded in SiO2 surrounding under pumping with 5 ns light pulses at 380, 400, and 500 nm. As an important property, our experiments show a short lifetime of the population inversion allowing a generation of short (a few nanosecond) amplified light pulses in the Si/SiO2 lattice. The estimate for optical gain in the present samples is 6 cm(-1) at 720 nm. (C) 2001 American Institute of Physics.

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页码：1249 / 1251

页数：3

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