Work function of GaAs (001) surface obtained by the electron counting model

被引：11

作者：

Inoue, N ^{[1
]}

Higashino, T ^{[1
]}

Tanahashi, K ^{[1
]}

Kawamura, Y ^{[1
]}

机构：

[1] Univ Osaka Prefecture, RIAST, Sakai, Osaka 5998570, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

scanning electron microscopy; surface structure; work function; molecular beam epitaxy; arsenates; semiconducting III-V compounds;

D O I：

10.1016/S0022-0248(01)00649-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The secondary electron intensity from a GaAs (0 0 1) surface during molecular beam epitaxy growth is found to be related to the work function (WF). Quantitative theoretical evaluation of the WF for surface reconstruction was performed using the electron-counting model. The relative and absolute values of WF agree well with reported values. The WF For the other compounds with mixed compositions and surface reconstructions can be predicted. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：123 / 126

页数：4

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