A SPICE Compact Model for Unipolar RRAM Reset Process Analysis

被引：39

作者：

Jimenez-Molinos, Francisco ^{[1
]}

Villena, Marco A. ^{[1
]}

Roldan, Juan B. ^{[1
]}

Roldan, Andres M. ^{[1
]}

机构：

[1] Univ Granada, Fac Ciencias, Dept Elect & Tecnol Comp, E-18071 Granada, Spain

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 03期

关键词：

Abrupt and progressive reset; circuital model; compact model; conductive filaments (CFs); resistive random access memory (RRAM) variability; resistive switching (RS) memory; SPICE; thermal dissolution; RESISTIVE-SWITCHING MEMORY; DYNAMICS;

D O I：

10.1109/TED.2014.2387429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physically based circuit model is proposed for SPICE simulation of thermally assisted reset transitions in resistive switching devices. The model allows the simulation of conductive filaments with complex structures, such as a main filament with several subfilaments attached forming a tree structure, or several filaments interlaced between them. The model has been validated by comparing with experimental data and the simulations obtained with a previously published simulation tool. A study of the influence of different subfilaments configurations on the variability of resistive random access memory I-V reset curves is also presented.

引用

页码：955 / 962

页数：8

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