Energy relaxation by phonon scattering in long-range ordered (Al0.5Ga0.5)0.5In0.5P

被引：0

作者：

Kita, T ^{[1
]}

Yamashita, K ^{[1
]}

Nishino, T ^{[1
]}

Wang, Y ^{[1
]}

Murase, K ^{[1
]}

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier relaxation and recombination in long-range ordered (Al0.5Ga0.5)(0.5)In0.5P have been studied by selectively excited PL spectroscopy. We found phonon assisted sharp resonant photoluminescence (PL) lines in long-range ordered (LRO) (Al0.5Ga0.5)(0.5)In0.5P by selectively excited PL spectroscopy. The observation of the resonant PL demonstrates energy relaxation from the excited state (X level) to the ground state (Gamma level) by inelastic phonon scattering.

引用

页码：218 / 219

页数：2

共 6 条

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