Introduction of InP-based light emitter into GaAs-based 3D photonic crystal by improved wafer bonding of dissimilar materials

被引：0

作者：

Imada, M ^{[1
]}

Ogawa, S ^{[1
]}

Yoshimoto, S ^{[1
]}

Noda, S ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

SENSORS AND MATERIALS | 2005年 / 17卷 / 06期

关键词：

optical material; photonic crystal; thermal stress; wafer bonding;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We developed improved wafer-bonding techniques for dissimilar materials in order to introduce an InP-based light emitter into a GaAs-based three-dimensional (3D) photonic crystal (PC). Observation of the GaAs/InGaAsP-bonding interface by scanning acoustic microscopy revealed that debonding occurred at approximately 300 degrees C due to the differing thermal expansion coefficients of GaAs and InP. We calculated thermal stress using a 2D finite-element method and found that it could be reduced by thinning the InP substrate. These results were used to successfully develop a 3D PC incorporating a multiple quantum-well light-emitting structure and artificial defects. Photolunimescence measurements revealed that spontaneous emission within the PC region was reduced due to the complete photonic band gap, while strong emission due to the defect state was observed only within the defect region. These results are important steps towards the realization of novel light-sources, such as zero-threshold lasers, using 3D PCs.

引用

页码：343 / 353

页数：11

共 59 条

[1] High-Q photonic nanocavity in a two-dimensional photonic crystal [J].

Akahane, Y ;

Asano, T ;

Song, BS ;

Noda, S .

NATURE, 2003, 425 (6961) :944-947

[2] Wafer bonding of different III-V compound semiconductors by atomic hydrogen surface cleaning [J].

Akatsu, T ;

Plössl, A ;

Scholz, R ;

Stenzel, H ;

Gösele, U .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) :3856-3862

[3] Microassembly of semiconductor three-dimensional photonic crystals [J].

Aoki, K ;

Miyazaki, HT ;

Hirayama, H ;

Inoshita, K ;

Baba, T ;

Sakoda, K ;

Shinya, N ;

Aoyagi, Y .

NATURE MATERIALS, 2003, 2 (02) :117-121

[4] Observation of light propagation in photonic crystal optical waveguides with bends [J].

Baba, T ;

Fukaya, N ;

Yonekura, J .

ELECTRONICS LETTERS, 1999, 35 (08) :654-655

[5] DOUBLE-FUSED 1.52-MU-M VERTICAL-CAVITY LASERS [J].

BABIC, DI ;

DUDLEY, JJ ;

STREUBEL, K ;

MIRIN, RP ;

BOWERS, JE ;

HU, EL .

APPLIED PHYSICS LETTERS, 1995, 66 (09) :1030-1032

[6] Optical and confinement properties of two-dimensional photonic crystals [J].

Benisty, H ;

Weisbuch, C ;

Labilloy, D ;

Rattier, M ;

Smith, CJM ;

Krauss, TF ;

De la Rue, RM ;

Houdré, R ;

Oesterle, U ;

Jouanin, C ;

Cassagne, D .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1999, 17 (11) :2063-2077

[7] Large-scale synthesis of a silicon photonic crystal with a complete three-dimensional bandgap near 1.5 micrometres [J].

Blanco, A ;

Chomski, E ;

Grabtchak, S ;

Ibisate, M ;

John, S ;

Leonard, SW ;

Lopez, C ;

Meseguer, F ;

Miguez, H ;

Mondia, JP ;

Ozin, GA ;

Toader, O ;

van Driel, HM .

NATURE, 2000, 405 (6785) :437-440

[8] Radiation properties of sources inside photonic crystals [J].

Bulu, I ;

Caglayan, H ;

Ozbay, E .

PHYSICAL REVIEW B, 2003, 67 (20)

[9] Fabrication of photonic crystals for the visible spectrum by holographic lithography [J].

Campbell, M ;

Sharp, DN ;

Harrison, MT ;

Denning, RG ;

Turberfield, AJ .

NATURE, 2000, 404 (6773) :53-56

[10] Three-dimensional control of light in a two-dimensional photonic crystal slab [J].

Chow, E ;

Lin, SY ;

Johnson, SG ;

Villeneuve, PR ;

Joannopoulos, JD ;

Wendt, JR ;

Vawter, GA ;

Zubrzycki, W ;

Hou, H ;

Alleman, A .

NATURE, 2000, 407 (6807) :983-986

← 1 2 3 4 5 6 →