Phonon study of temperature evolution of strain in GaAs/Si(001) and GaAs/Si(111) heterostructures

被引：0
作者：
Quagliano, LG
Sobiesierski, Z
Orani, D
Ricci, A
机构：
[1] IMAI, CNR, Area Ricerca Roma, I-00016 Monterotondo Scalo, Italy
[2] Univ Wales Coll Cardiff, Dept Phys & Astron, Cardiff CF1 3TH, S Glam, Wales
来源：
PHYSICA B | 1999年 / 263卷
关键词：
Raman spectroscopy; strain; GaAs/Si; epitaxial growth;
D O I：
10.1016/S0921-4526(98)01460-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The temperature evolution of strain in GaAs layers grown on Si (001) and Si (111) substrates has been investigated by Raman scattering. The Raman results show that for temperatures lower than a certain temperature (similar or equal to 280 K for the (001) and similar or equal to 400 K for (111) growth directions) the phonon modes for the epilayers shift toward lower frequencies in comparison to bulk material. This is due to the "thermal" strain arising from the difference in thermal expansion coefficients between GaAs epilayer and Si. A reverse phenomenon occurs at higher temperatures indicating the presence of compressive strain due to the mismatch in lattice constants between the GaAs epilayers and the Si substrate. (C) 1999 Elsevier Science B.V. All rights reserved.
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页码：775 / 778
页数：4
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