Growth and scintillation properties of Pr doped Gd3(Ga,Al)5O12 single crystals

被引：22

作者：

Kamada, Kei ^{[1
]}

Yanagida, Takayuki ^{[2
]}

Pejchal, Jan ^{[3
]}

Nikl, Martin ^{[3
]}

Endo, Takanori ^{[1
]}

Tsutumi, Kousuke ^{[1
]}

Usuki, Yoshiyuki ^{[1
]}

Fujimoto, Yutaka ^{[2
]}

Fukabori, Akihiro ^{[2
]}

Yoshikawa, Akira ^{[2
,4
]}

机构：

[1] Furukawa Co Ltd, Mat Res Lab, Tsukuba, Ibaraki 3050856, Japan

[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] AS CR, Inst Phys, Prague 16253, Czech Republic

[4] Tohoku Univ, New Ind Creat Hatchery Ctr NICHe, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2012年 / 352卷 / 01期

关键词：

Single crystal growth; Oxides; Scintillator materials; Scintillators; DETECTORS; LUMINESCENCE; LSO;

D O I：

10.1016/j.jcrysgro.2012.02.002

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Pr:Gd-3(Ga,Al)(5)O-12 single crystals were grown by the micro-pulling down (mu-PD) method. All grown crystals were greenish and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al3+ sites by Ga3+ in garnet structure has been studied. In these crystals, Pr3+ 5d-4f emission is observed with 340 nm wavelength. Pr1%:Gd3Ga3Al2O12 shows highest emission intensity. The light yield of Pr:Gd3Ga3Al2O12 sample with 3 mm phi x 1 mm size was around 4500 photon/MeV. Scintillation decay time was 7.9 ns (0.5%), 46 ns (0.7%) and 214 ns (98.8%). (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：84 / 87

页数：4

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