GaN/SiC avalanche photodiodes

被引：33

作者：

Zhou, Qiugui ^{[1
]}

McIntosh, Dion C. ^{[1
]}

Lu, Zhiwen ^{[1
]}

Campbell, Joe C. ^{[1
]}

Sampath, Anand V. ^{[2
]}

Shen, Hongen ^{[2
]}

Wraback, Michael ^{[2
]}

机构：

[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

[2] AMSRD ARL SE EM, Army Res Lab, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 13期

关键词：

avalanche photodiodes; dark conductivity; electric breakdown; gallium compounds; III-V semiconductors; semiconductor epitaxial layers; silicon;

D O I：

10.1063/1.3636412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near ultraviolet-sensitive separate absorption and multiplication avalanche photodiodes with GaN/SiC epitaxial layers grown on SiC substrate were fabricated. Dark current < 1 pA at 90% breakdown voltage, maximum multiplication gain of similar to 10(5), and responsivity exceeding 4.2 A/W at 365 nm were achieved. (C) 2011 American Institute of Physics. [doi:10.1063/1.3636412]

引用

页数：3

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