Electronic structure studies of FeSi: A chiral topological system

被引:23
作者
Changdar, Susmita [1 ]
Aswartham, S. [2 ]
Bose, Anumita [3 ]
Kushnirenko, Y. [2 ]
Shipunov, G. [2 ]
Plumb, N. C. [4 ]
Shi, M. [4 ]
Narayan, Awadhesh [3 ]
Buechner, B. [2 ]
Thirupathaiah, S. [1 ,2 ]
机构
[1] SN Bose Natl Ctr Basic Sci, Condensed Matter Phys & Mat Sci Dept, Kolkata 700106, W Bengal, India
[2] IFW Dresden, Leibniz Inst Solid State Res, D-01171 Dresden, Germany
[3] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
[4] Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland
关键词
LOW-TEMPERATURE TRANSPORT; OPTICAL-PROPERTIES; GAP FORMATION; SEMIMETAL; SEMICONDUCTOR; SIGNATURES; FERMIONS; POINT; BAND;
D O I
10.1103/PhysRevB.101.235105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Most recent observations of topological Fermi arcs on the surface of manyfold degenerate B20 systems, CoSi and RhSi, have attracted enormous research interests. Although another isostructural system, FeSi, has been predicted to show bulk chiral fermions, it is yet to be clear theoretically and as well experimentally that whether FeSi possesses the topological surface Fermi arcs associated with the exotic chiral fermions in vicinity of the Fermi level. In this contribution, using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), we present the low-energy electronic structure of FeSi. We further report the surface state calculations to provide insights into the surface band structure of FeSi near the Fermi level. Unlike in CoSi or RhSi, FeSi has no topological Fermi arcs near the Fermi level as confirmed both from ARPES and surface state calculations. Further, the ARPES data show spin-orbit coupling (SOC) band splitting of 40 meV, which is in good agreement with bulk band-structure calculations. We noticed an anomalous temperature-dependent resistivity in FeSi which can be understood through the electron-phonon interactions as we find a Debye energy of 80 meV from the ARPES data.
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页数:8
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