A nonvolatile organic memory device using ITO surfaces modified by Ag-nanodots

被引：83

作者：

Kondo, Takeshi ^{[1
]}

Lee, Sang Min ^{[1
]}

Malicki, Michal ^{[2
]}

Domercq, Benoit ^{[1
]}

Marder, Seth R. ^{[2
]}

Kippelen, Bernard ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Chem & Biochem, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA

来源：

ADVANCED FUNCTIONAL MATERIALS | 2008年 / 18卷 / 07期

关键词：

D O I：

10.1002/adfm.200700567

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on a single-layer organic memory device made of poly(N-vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag-NDs). Devices exhibit high ON/OFF switching ratios of 10(4). This level of performance could be achieved by modifying the ITO electrodes with some Ag-NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low-resistance state can be attributed to Schottky charge tunnelling through low-resistance pathways of Al particles in the polymer layer and that the high-resistance state can be controlled by charge trapping by the Al particles and Ag-NDs.

引用

页码：1112 / 1118

页数：7

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