Anisotropic transport of electrons and holes in thin GaAs/AlAs quantum wells grown on (311)A GaAs substrates

Mobilities of electrons and holes in a set of thin (3 1 1)A GaAs quantum wells (QWs) are investigated with focus on their in-plane anisotropies to clarify the roles of anisotropies in interface roughness and hole masses m(h)*. The roughness is modeled with a Gaussian-type autocorrelation function, characterized by an average height Delta and two correlation lengths Lambda(parallel to) and Lambda(perpendicular to) along the [(2) over bar 3 3] and [0 1 (1) over bar] axes. By analyzing electron mobilities mu(e) in an 8-nm-thick n-type QW, All and AL were determined to be 18 and 12 run. Hole mobilities mu(h) in a 5-nm-thick p-type QW were measured and interpreted fairly well by a theoretical calculation in which Lambda(parallel to), Lambda(perpendicular to) and Lambda obtained earlier were used. (C) 2007 Elsevier B.V. All rights reserved.