Impact of Eddy Currents and Crowding Effects on High-Frequency Losses in Planar Schottky Diodes

被引:62
作者
Tang, Aik Yean [1 ]
Stake, Jan [1 ]
机构
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Terahertz & Millimetre Wave Lab, GigaHertz Ctr, SE-42196 Gothenburg, Sweden
关键词
Current distribution; eddy current; electromagnetic coupling; geometric modeling; parameter extraction; proximity effect; resistance; Schottky diodes; skin effect; submillimeter-wave devices; submillimeter-wave integrated circuits; SPREADING RESISTANCE; SERIES IMPEDANCE; MILLIMETER; MODEL;
D O I
10.1109/TED.2011.2160724
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present the influence of eddy currents, skin and proximity effects on high-frequency losses in planar terahertz Schottky diodes. The high-frequency losses, particularly losses due to the spreading resistance, are analyzed as a function of the ohmic-contact mesa geometry for frequencies up to 600 GHz. A combination of 3-D electromagnetic (EM) simulations and parameter extraction based on lumped equivalent circuit is used for the analysis. The extracted low-frequency spreading resistance shows a good agreement with the results from electrostatic simulations and experimental data. By taking into consideration the EM field couplings, the analysis shows that the optimum ohmic-contact mesa thickness is approximately one-skin depth at the operating frequency. It is also shown that, for a typical diode, the onset of eddy current loss starts at similar to 200 GHz, and the onset of a mixture of skin and proximity effects occurs around similar to 400 GHz.
引用
收藏
页码:3260 / 3269
页数:10
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