Self-powered CsCu2I3/Si heterojunction UV photodetectors prepared by pulsed-laser deposition

被引:22
作者
Wang, Cheng [1 ]
Zhao, Fengzhou [1 ]
Zhou, Zhiying [1 ]
Li, Xiaoxuan [1 ]
He, Shunli [1 ]
Zhang, Menglong [1 ]
Zhang, Dengying [1 ]
Zhang, Lichun [1 ]
机构
[1] Ludong Univ, Sch Phys & Optoelect Engn, Yantai 264025, Peoples R China
基金
中国国家自然科学基金;
关键词
CsCu2I3; UV photodetector; Self-powered; Pulsed laser deposition; GROWTH; IODIDE; CUI;
D O I
10.1016/j.jallcom.2022.164245
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
All-inorganic perovskite CsCu2I3 thin films have been prepared on Si(100) substrates by pulsed laser de-position technology. And the influence of the substrate temperatures on the morphology, structure and optical properties of the CsCu2I3 films was investigated by SEM, XRD, PL and absorption spectra. A prototype CsCu2I3/Si n-n heterojunction UV photodetection device was constructed with LiF/Al and Au Ohmic contact electrodes. The photodetector demonstrates excellent self-powered photoresponse performance with an on/off ratio of similar to 2150 at 0 V. The device also exhibits good spectral selectivity and photoresponse characteristics in the UV range (280-370 nm). The peak responsivity (R) and specific detectivity (D*) of the CsCu2I3/Si heterojunction device are 7.1 mA/W and 2.6 x 10(11) Jones at 0 V and 330 nm (similar to 700 mu W/cm2) light illumination, and shows good stability and reproducibility. (c) 2022 Elsevier B.V. All rights reserved.
引用
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页数:8
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