Field emission from diamond nanotips for scanning probe lithography

被引：30

作者：

Hofmann, Martin ^{[1
]}

Lenk, Claudia ^{[1
]}

Ivanov, Tzvetan ^{[1
]}

Rangelow, Ivo W. ^{[1
]}

Reum, Alexander ^{[2
]}

Ahmad, Ahmad ^{[2
]}

Holz, Mathias ^{[2
]}

Manske, Eberhard ^{[3
]}

机构：

[1] Tech Univ Ilmenau, MNES, IMNE, Gustav Kirchhoff Str 1, D-98693 Ilmenau, Germany

[2] Nano Analyt GmbH, Ehrenbergstr 1, D-98693 Ilmenau, Germany

[3] Tech Univ Ilmenau, PMS, Gustav Kirchhoff Str 1, D-98693 Ilmenau, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2018年 / 36卷 / 06期

关键词：

ATOMIC-FORCE MICROSCOPE; ELECTRON-BEAM LITHOGRAPHY; SINGLE-CRYSTAL DIAMOND; DIRECT-WRITE; HIGH-SPEED; RESOLUTION LIMITS; SURFACE; SILICON; FABRICATION; MECHANISM;

D O I：

10.1116/1.5048193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-digit nanometer lithography is a basic requirement for beyond CMOS devices. To address this lithography challenge, a variety of different lithographic methods were developed. Here, the authors present the possibility of field emission scanning probe lithography (FE-SPL) with a diamond tip in order to enhance the lifetime of the used tip. A superior mechanical hardness and a good electron emission stability even after a total of 48 h of lithographic patterning by FE-SPL were proven, and features with half pitches down to 15 nm have been fabricated. Published by the AVS.

引用

页数：6

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