Field emission from diamond nanotips for scanning probe lithography

被引:28
作者
Hofmann, Martin [1 ]
Lenk, Claudia [1 ]
Ivanov, Tzvetan [1 ]
Rangelow, Ivo W. [1 ]
Reum, Alexander [2 ]
Ahmad, Ahmad [2 ]
Holz, Mathias [2 ]
Manske, Eberhard [3 ]
机构
[1] Tech Univ Ilmenau, MNES, IMNE, Gustav Kirchhoff Str 1, D-98693 Ilmenau, Germany
[2] Nano Analyt GmbH, Ehrenbergstr 1, D-98693 Ilmenau, Germany
[3] Tech Univ Ilmenau, PMS, Gustav Kirchhoff Str 1, D-98693 Ilmenau, Germany
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2018年 / 36卷 / 06期
关键词
ATOMIC-FORCE MICROSCOPE; ELECTRON-BEAM LITHOGRAPHY; SINGLE-CRYSTAL DIAMOND; DIRECT-WRITE; HIGH-SPEED; RESOLUTION LIMITS; SURFACE; SILICON; FABRICATION; MECHANISM;
D O I
10.1116/1.5048193
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single-digit nanometer lithography is a basic requirement for beyond CMOS devices. To address this lithography challenge, a variety of different lithographic methods were developed. Here, the authors present the possibility of field emission scanning probe lithography (FE-SPL) with a diamond tip in order to enhance the lifetime of the used tip. A superior mechanical hardness and a good electron emission stability even after a total of 48 h of lithographic patterning by FE-SPL were proven, and features with half pitches down to 15 nm have been fabricated. Published by the AVS.
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页数:6
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