Integrated optoelectronic circuits with InP-based HBTs

被引：1

作者：

Yap, D ^{[1
]}

Brown, YK ^{[1
]}

Walden, RH ^{[1
]}

Broekaert, TPE ^{[1
]}

Elliott, KR ^{[1
]}

Yung, MW ^{[1
]}

Persechini, DL ^{[1
]}

Ng, WW ^{[1
]}

Kost, AR ^{[1
]}

机构：

[1] Hughes Res Labs, LLC, Malibu, CA 90265 USA

来源：

OPTOELECTRONIC INTERGRATED CIRCUITS AND PACKAGING V | 2001年 / 4290卷

关键词：

optoelectronics; receivers; modulators; heterojunction-bipolar transistors;

D O I：

10.1117/12.426901

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Integrated optoelectronic circuits that are capable of very high speeds or high functionality have been demonstrated using InP-based heterojunction bipolar transistors (HBTs). Optoelectronic receivers contain photodetectors fabricated from the same epitaxial material structure as the HBTs. High-functionality digital receivers, analog receiver arrays as well as analog-to-digital converters have been realized. Optoelectronic modulation circuits for signal transmission also contain separately grown, surface-coupled multiple-quantum-well (MQW) modulators.

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收藏

页码：1 / 11

页数：11

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