Switched-mode high-efficiency Ka-band MMIC power amplifier in GaAs pHEMT technology

被引：3
|
作者：
Negra, R [1 ]
Bächtold, W [1 ]
机构：
[1] Swiss Fed Inst Technol, ETH, Lab Electromagnet Fields & Microwave Elect, Zurich, Switzerland
来源：
EDMO 2004: 12TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2004年
关键词：
D O I：
10.1109/EDMO.2004.1412392
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A highly efficient monolithically integrated class-E power amplifier for the 22-25GHz range is presented. The circuit is fabricated with a 0.12 mu m GaAs pHEMT process using coplanar waveguide technology. Careful selection and design of the load network is crucial for obtaining high efficiency. Measurement results show a peak power added efficiency of more than 42% at 23GHz from a 2.2V supply. To the authors' knowledge, this is the highest power added efficiency for class-E amplifiers at Ka-band reported up to date.
引用
收藏
页码：15 / 18
页数：4
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