Effects of interfacial polarization on the dielectric properties of BiFeO3 thin film capacitors

被引：92

作者：

Liu, Guo-Zhen ^{[1
]}

Wang, Can ^{[1
]}

Wang, Chun-Chang ^{[1
]}

Qiu, Jie ^{[1
]}

He, Meng ^{[1
]}

Xing, Jie ^{[1
]}

Jin, Kui-Juan ^{[1
]}

Lu, Hui-Bin ^{[1
]}

Yang, Guo-Zhen ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2900989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial BiFeO3/La0.7Sr0.3MnO3 (BFO/LSMO) heterostructures were grown on SrTiO3 (001) substrates. Dielectric properties of the BFO thin films were investigated in an In/BFO/LSMO capacitor configuration. The capacitance of the capacitor shows strong dependences on measuring frequency and bias voltage especially in low frequency region (<= 1 MHz). By means of complex impedance analysis, it is found that the interfacial polarization caused by space charges in the film/electrode interfaces plays an important role in the dielectric behavior of the capacitor. Our results indicate that the influences of film/electrode interfaces might not be neglected on the dielectric properties of the BFO thin film capacitors. (C) 2008 American Institute of Physics.

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页数：3

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