Effects of interfacial polarization on the dielectric properties of BiFeO3 thin film capacitors

被引：92
|
作者：
Liu, Guo-Zhen [1 ]
Wang, Can [1 ]
Wang, Chun-Chang [1 ]
Qiu, Jie [1 ]
He, Meng [1 ]
Xing, Jie [1 ]
Jin, Kui-Juan [1 ]
Lu, Hui-Bin [1 ]
Yang, Guo-Zhen [1 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2900989
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial BiFeO3/La0.7Sr0.3MnO3 (BFO/LSMO) heterostructures were grown on SrTiO3 (001) substrates. Dielectric properties of the BFO thin films were investigated in an In/BFO/LSMO capacitor configuration. The capacitance of the capacitor shows strong dependences on measuring frequency and bias voltage especially in low frequency region (<= 1 MHz). By means of complex impedance analysis, it is found that the interfacial polarization caused by space charges in the film/electrode interfaces plays an important role in the dielectric behavior of the capacitor. Our results indicate that the influences of film/electrode interfaces might not be neglected on the dielectric properties of the BFO thin film capacitors. (C) 2008 American Institute of Physics.
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页数：3
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