Uniaxial stress effects on a Si/Si1-xGex double-barrier resonant tunnelling structure studied by magnetotunnelling spectroscopy

被引：1
作者：
Gennser, U
Zaslavsky, A
Grutzmacher, DA
Gassot, P
Portal, JC
机构：
[1] PAUL SCHERRER INST,CH-5232 VILLIGEN,SWITZERLAND
[2] BROWN UNIV,DEPT ENGN,PROVIDENCE,RI 02912
[3] INST NATL SCI APPL,F-31077 TOULOUSE,FRANCE
来源：
APPLIED SURFACE SCIENCE | 1996年 / 102卷
关键词：
D O I：
10.1016/0169-4332(96)00056-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Magnetotunnelling spectroscopy combined with the application of uniaxial stress has been performed on a p-type Si/Si1-xGex double barrier resonant tunnelling structure. Large effects of the strain are seen both in the intensity of the resonances, in the position of the resonance voltages, and on the curvature of the hole-subband dispersions. The change in intensity is indicative of the bandmixing taking place in the barriers. The observed voltage shifts cannot be explained by a simple four-band model for an isolated quantum well.
引用
收藏
页码：242 / 246
页数：5
相关论文
共 50 条
  • [21] QUANTUM CONFINEMENT OF HOLES IN SI1-XGEX/SI QUANTUM-WELLS STUDIED BY ADMITTANCE SPECTROSCOPY
    LU, F
    JIANG, JY
    SUN, HH
    GONG, DW
    ZHANG, XG
    WANG, X
    PHYSICAL REVIEW B, 1995, 51 (07): : 4213 - 4217
  • [22] A THEORETICAL-STUDY OF RESONANT TUNNELLING IN THE DOUBLE-BARRIER STRUCTURE
    PENG, JP
    CHEN, H
    ZHOU, SX
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (32) : 5451 - 5461
  • [23] EFFECT OF STRAIN ON SI/SI1-XGEX VALENCE BAND-STRUCTURE STUDIED BY ANGLE-RESOLVED MAGNETOTUNNELING SPECTROSCOPY
    GENNSER, U
    KESAN, VP
    SYPHERS, DA
    OTT, JA
    SMITH, TP
    IYER, SS
    YANG, ES
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 940 - 942
  • [24] Photoluminescence and Raman spectroscopy of Si/Si1-xGex quantum dots
    Tang, YS
    Torres, CMS
    Dietrich, B
    Kissinger, W
    Whall, TE
    Parker, EHC
    JOURNAL OF CRYSTAL GROWTH, 1995, 157 (1-4) : 280 - 284
  • [25] CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY OF DISLOCATIONS IN SI AND SI1-XGEX ALLOYS
    HIGGS, V
    LIGHTOWLERS, EC
    TAJBAKHSH, S
    WRIGHT, PJ
    APPLIED PHYSICS LETTERS, 1992, 61 (09) : 1087 - 1089
  • [26] STRAIN EFFECTS ON THE BAND-STRUCTURE OF SI/SI1-XGEX(001) SUPERLATTICES
    RUCKER, H
    ENDERLEIN, R
    BECHSTEDT, F
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 153 (02): : 595 - 609
  • [27] Characterization of Si/Si1-xGex/Si heterostructures by capacitance-transient spectroscopy
    Brighten, J.C.
    Hawkins, I.D.
    Peaker, A.R.
    Kubiak, R.A.
    Parker, E.H.C.
    Whall, T.E.
    Journal of Applied Physics, 1994, 76 (07):
  • [28] CHARACTERIZATION OF SI/SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY
    BRIGHTEN, JC
    HAWKINS, ID
    PEAKER, AR
    KUBIAK, RA
    PARKER, EHC
    WHALL, TE
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (07) : 4237 - 4243
  • [29] STRESS AND ITS EFFECT ON THE INTERDIFFUSION IN SI1-XGEX/SI SUPERLATTICES
    PROKES, SM
    GLEMBOCKI, OJ
    GODBEY, DJ
    APPLIED PHYSICS LETTERS, 1992, 60 (09) : 1087 - 1089
  • [30] Charging effects in the alternating-current conductance of a double-barrier resonant tunnelling structure
    Anantram, MP
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (40) : 9015 - 9027
12345