Uniaxial stress effects on a Si/Si1-xGex double-barrier resonant tunnelling structure studied by magnetotunnelling spectroscopy

被引：1
作者：
Gennser, U
Zaslavsky, A
Grutzmacher, DA
Gassot, P
Portal, JC
机构：
[1] PAUL SCHERRER INST,CH-5232 VILLIGEN,SWITZERLAND
[2] BROWN UNIV,DEPT ENGN,PROVIDENCE,RI 02912
[3] INST NATL SCI APPL,F-31077 TOULOUSE,FRANCE
来源：
APPLIED SURFACE SCIENCE | 1996年 / 102卷
关键词：
D O I：
10.1016/0169-4332(96)00056-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Magnetotunnelling spectroscopy combined with the application of uniaxial stress has been performed on a p-type Si/Si1-xGex double barrier resonant tunnelling structure. Large effects of the strain are seen both in the intensity of the resonances, in the position of the resonance voltages, and on the curvature of the hole-subband dispersions. The change in intensity is indicative of the bandmixing taking place in the barriers. The observed voltage shifts cannot be explained by a simple four-band model for an isolated quantum well.
引用
收藏
页码：242 / 246
页数：5
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