Temperature profile of GaInAs/AlInAs/InP quantum cascade-laser facets measured by microprobe photoluminescence

被引：62
作者：
Spagnolo, V
Troccoli, M
Scamarcio, G
Gmachl, C
Capasso, F
Tredicucci, A
Sergent, AM
Hutchinson, AL
Sivco, DL
Cho, AY
机构：
[1] Univ Bari, Dipartimento Interateneo Fis, INFM, I-70126 Bari, Italy
[2] Politecn Bari, I-70126 Bari, Italy
[3] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 15期
关键词：
D O I：
10.1063/1.1359146
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The local temperature of quantum-cascade lasers operating in continuous wave mode is reported. This information is extracted from the thermal shift of the band-to-band photoluminescence peaks in the AlInAs and InP cladding layers of quantum-cascade laser facets using a high-resolution microprobe setup. Interpolation by means of a two-dimensional heat diffusion model allows to obtain the temperature profile and the thermal conductivity in the waveguide core. Comparison between substrate and epilayer-side mounted lasers shows the superior thermal dissipation capability of the latter, and explains their better performance with respect to threshold current and maximum operating temperature. (C) 2001 American Institute of Physics.
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页码：2095 / 2097
页数：3
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