Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs

被引：26

作者：

Heuken, L. ^{[1
]}

Kortemeyer, M. ^{[2
,3
]}

Ottaviani, A. ^{[1
]}

Schroeder, M. ^{[1
]}

Alomari, M. ^{[1
]}

Fahle, D. ^{[3
]}

Marx, M. ^{[3
]}

Heuken, M. ^{[2
,3
]}

Kalisch, H. ^{[2
]}

Vescan, A. ^{[2
]}

Burghartz, J. N. ^{[1
]}

机构：

[1] IMS CHIPS, Inst Mikroelekt Sungari, D-70569 Stuttgart, Germany

[2] Rhein Westfal TH Aachen, RWTH Aachen, Compound Semicond Technol Grp, D-52074 Aachen, Germany

[3] AIXTRON SE, D-52134 Herzogenrath, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 03期

关键词：

AlGaN/AlN; buffer; high electron mobility transistor (HEMT); reliability; super-lattice (SL); trapping; BREAKDOWN VOLTAGE; SILICON; SI;

D O I：

10.1109/TED.2020.2968757

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, an optimized carbon-doped AlGaN/AlN super-lattice (SL) buffer structure for GaN-based high electron mobility transistors, grown on 200-mm Si wafers is demonstrated. The resulting transistor structure features: 1) maximum vertical breakdown strength as high as 2.72 MV/cm, 2) vertical breakdown voltages (BVs) above 1.2 kV, 3) lateral BVs above 2.2 kV, 4) reduction in buffer traps, which is expected to result in low-dynamic R-ON, and 5) more than 50 years of extrapolated lifetime at 150 degrees C under 650-V bias. These were achieved by optimizing growth parameters by systematically varying the SL growth temperature, SL carbon-doping, ammonia flow, and SL pair count with adjusting the total buffer thickness. The detailed analysis shows fundamental improvements compared to a conventional carbon-doped (Al)GaN staircase buffer with the same thickness and comparable growth time.

引用

页码：1113 / 1119

页数：7