Sub-Volt Fully Balanced Differential Difference Amplifier

被引：22
作者：
Khateb, Fabian [1 ,2 ]
Kumngern, Montree [3 ]
Vlassis, Spyridon [4 ]
Psychalinos, Costas [4 ]
Kulej, Tomasz [5 ]
机构：
[1] Brno Univ Technol, Dept Microelect, CS-61090 Brno, Czech Republic
[2] Czech Tech Univ, Fac Biomed Engn, Kladno, Czech Republic
[3] King Mongkuts Inst Technol Ladkrabang, Fac Engn, Bangkok 10520, Thailand
[4] Univ Patras, Dept Phys, Elect Lab, GR-26110 Patras, Greece
[5] Czestochowa Tech Univ, Dept Elect Engn, PL-42201 Czestochowa, Poland
来源：
JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS | 2015年 / 24卷 / 01期
关键词：
Bulk-driven MOS transistor; quasi-floating-gate MOS transistor; differential difference amplifier; state variable filter; FLOATING-GATE; TRANSCONDUCTANCE AMPLIFIER; CIRCUIT; OTA;
D O I：
10.1142/S021812661550005X
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a new CMOS structure for a fully balanced differential difference amplifier (FB-DDA) designed to operate from a sub-volt supply. This structure employs the bulk-driven quasi-floating- gate (BD-QFG) technique to achieve the capability of an ultra-low voltage operation and an extended input voltage range. The proposed BD-QFG FB-DDA is suitable for ultra-low-voltage low-power applications. The circuit is designed with a single supply of 0.5V and consumes only 357 nW of power. The proposed circuit was simulated in a 0.18-mu m TSMC CMOS technology and the simulation results prove its functionality and attractive parameters. An application example of a state variable filter is also presented to confirm the usefulness of the proposed BD-QFGFB-DDA.
引用
收藏
页数：18
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