Correlation between morphology and ambipolar transport in organic field-effect transistors -: art. no. 114508

被引：33

作者：

Singh, TB ^{[1
]}

Günes, S

Marjanovic, N

Sariciftci, NS

Menon, R

机构：

[1] Johannes Kepler Univ Linz, LIOS, Linz, Austria

[2] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 11期

关键词：

D O I：

10.1063/1.1929850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Attaining ambipolar charge transport in organic field-effect transistors (OFET) is highly desirable from both fundamental understanding and application points of view. We present the results of an approach to obtain ambipolar OFET with an active layer of organic semiconductor blends using semiconducting polymers in composite with fullerene derivatives. Clear features of forming the superposition of both hole and electron-enhanced channels for an applied gate field are observed. The present studies suggest a strong correlation of thin-film nanomorphology and ambipolar transport in field-effect devices. (C) 2005 American Institute of Physics.

引用

页数：5

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