Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate

被引：8

作者：

Zhao, Lantian ^{[1
,2
]}

Liu, Qiang ^{[1
,2
]}

Liu, Chenhe ^{[1
,2
]}

Chen, Lingli ^{[1
,2
]}

Yang, Yumeng ^{[3
]}

Wei, Xing ^{[1
,2
]}

Mu, Zhiqiang ^{[1
,2
]}

Yu, Wenjie ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

[3] ShanghaiTech Univ, Shanghai Engn Res Ctr Energy Efficient & Custom A, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 10期

关键词：

Gallium arsenide; Logic gates; Substrates; Silicon-on-insulator; MOSFET; Total ionizing dose; Performance evaluation; nanosheet; gate-all-around; void-embedded silicon on insulator; RADIATION;

D O I：

10.1109/LED.2021.3107851

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The total ionizing dose response of nanosheet gate-all-around metal-oxide-semiconductor field effect transistor (NS GAA MOSFET) fabricated on novel void-embedded silicon on insulator (VESOI) substrate was investigated in this work. Strong radiation tolerance with as small as 46.6mV threshold voltage shift and non-discernable increase of off-state current were observed even at a dose of 7Mrad(Si) X-ray irradiation. Both the experiment and simulation results reveal that the radiation tolerance of the MOSFET device can be inherently attributed to the GAA channel. Our work undoubtedly demonstrates that the NS GAA device on VESOI substrate has great potential for radiation-harden applications under heavy radiation environment.

引用

页码：1428 / 1431

页数：4

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