共 11 条
Compact model for long-channel cylindrical surrounding-gate MOSFETs valid from low to high doping concentrations
被引:14
作者:

Cheralathan, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Rovira & Virgili, DEEEA, Tarragona 43007, Spain Univ Rovira & Virgili, DEEEA, Tarragona 43007, Spain

Cerdeira, A.
论文数: 0 引用数: 0
h-index: 0
机构:
CINVESTAV IPN, SEES, Mexico City, DF, Mexico Univ Rovira & Virgili, DEEEA, Tarragona 43007, Spain

Iniguez, B.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Rovira & Virgili, DEEEA, Tarragona 43007, Spain Univ Rovira & Virgili, DEEEA, Tarragona 43007, Spain
机构:
[1] Univ Rovira & Virgili, DEEEA, Tarragona 43007, Spain
[2] CINVESTAV IPN, SEES, Mexico City, DF, Mexico
关键词:
Surrounding-gate (SRG) MOSFET;
Compact modeling;
CHARGE;
VOLTAGE;
D O I:
10.1016/j.sse.2010.08.015
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This paper presents a compact model for the electrostatic potentials and the current characteristics of doped long-channel cylindrical surrounding-gate (SRG) MOSFETs. An analytical expression of the potentials is derived as a function of doping concentration. Then, the mobile charge density is calculated using the analytical expressions of the surface potential at the surface and the difference of potentials between the surface and the center of the silicon doped layer. Using the expression obtained for the mobile charge, a drain current expression is derived. Comparisons of the modeled expressions with the simulated characteristics obtained from the 3D ATLAS device simulator for the transfer characteristics, as well for the output characteristics, show good agreement within the practical range of gate and drain voltages and for doping concentrations ranging from 10(16) cm(-3) to 5 x 10(18) cm(-3). (C) 2010 Elsevier Ltd. All rights reserved.
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页码:13 / 18
页数:6
相关论文
共 11 条
- [1] Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's[J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (02) : 74 - 76Auth, CP论文数: 0 引用数: 0 h-index: 0机构: Center for Integrated Systems, Stanford University, StanfordPlummer, JD论文数: 0 引用数: 0 h-index: 0机构: Center for Integrated Systems, Stanford University, Stanford
- [2] Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs[J]. SOLID-STATE ELECTRONICS, 2008, 52 (05) : 830 - 837Cerdeira, A.论文数: 0 引用数: 0 h-index: 0机构: CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City 14000, DF, Mexico CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City 14000, DF, MexicoMoldovan, O.论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona, Spain CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City 14000, DF, MexicoIniguez, B.论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona, Spain CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City 14000, DF, MexicoEstrada, M.论文数: 0 引用数: 0 h-index: 0机构: CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City 14000, DF, Mexico CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City 14000, DF, Mexico
- [3] Compact model for short channel symmetric doped double-gate MOSFETs[J]. SOLID-STATE ELECTRONICS, 2008, 52 (07) : 1064 - 1070Cerdeira, Antonio论文数: 0 引用数: 0 h-index: 0机构: CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City, DF, Mexico CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City, DF, MexicoIniguez, Benjamin论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Enginyeria Elect Elect & Automat, Tarragona, Spain CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City, DF, MexicoEstrada, Magali论文数: 0 引用数: 0 h-index: 0机构: CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City, DF, Mexico CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City, DF, Mexico
- [4] A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs[J]. SOLID-STATE ELECTRONICS, 2006, 50 (03) : 416 - 421He, Jin论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Beijing 100871, Peoples R China Peking Univ, Inst Microelect, Beijing 100871, Peoples R ChinaZhang, Xing论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Beijing 100871, Peoples R ChinaZhang, Ganggang论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Beijing 100871, Peoples R ChinaChan, Mansun论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Beijing 100871, Peoples R ChinaWang, Yangyuan论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
- [5] Continuous analytic I-V model for surrounding-gate MOSFETs[J]. IEEE ELECTRON DEVICE LETTERS, 2004, 25 (08) : 571 - 573Jiménez, D论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Barcelona, Escola Tecn Super Engn, Dept Elect Engn, Barcelona 08193, SpainIñíguez, B论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Barcelona, Escola Tecn Super Engn, Dept Elect Engn, Barcelona 08193, SpainSuñé, J论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Barcelona, Escola Tecn Super Engn, Dept Elect Engn, Barcelona 08193, SpainMarsal, LF论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Barcelona, Escola Tecn Super Engn, Dept Elect Engn, Barcelona 08193, SpainPallarès, J论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Barcelona, Escola Tecn Super Engn, Dept Elect Engn, Barcelona 08193, SpainRoig, J论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Barcelona, Escola Tecn Super Engn, Dept Elect Engn, Barcelona 08193, SpainFlores, D论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Barcelona, Escola Tecn Super Engn, Dept Elect Engn, Barcelona 08193, Spain
- [6] Junctionless multigate field-effect transistor[J]. APPLIED PHYSICS LETTERS, 2009, 94 (05)Lee, Chi-Woo论文数: 0 引用数: 0 h-index: 0机构: Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, Ireland Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, IrelandAfzalian, Aryan论文数: 0 引用数: 0 h-index: 0机构: Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, Ireland Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, IrelandAkhavan, Nima Dehdashti论文数: 0 引用数: 0 h-index: 0机构: Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, Ireland Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, IrelandYan, Ran论文数: 0 引用数: 0 h-index: 0机构: Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, Ireland Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, IrelandFerain, Isabelle论文数: 0 引用数: 0 h-index: 0机构: Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, Ireland Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, IrelandColinge, Jean-Pierre论文数: 0 引用数: 0 h-index: 0机构: Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, Ireland Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, Ireland
- [7] A charge-based compact model for predicting the current-voltage and capacitance-voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs[J]. SOLID-STATE ELECTRONICS, 2009, 53 (01) : 49 - 53Liu, Feilong论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Minist Educ, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Shenzhen 518055, Peoples R China Peking Univ, Minist Educ, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R ChinaZhang, Jian论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Minist Educ, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Peking Univ, Minist Educ, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R ChinaHe, Frank论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Minist Educ, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Shenzhen 518055, Peoples R China Peking Univ, Minist Educ, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R ChinaLiu, Feng论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Shenzhen 518055, Peoples R China Peking Univ, Minist Educ, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R ChinaZhang, Lining论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Minist Educ, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China Peking Univ, Minist Educ, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R ChinaChan, Mansun论文数: 0 引用数: 0 h-index: 0机构: Hong Kong Univ Sci & Technol, ECE, Kowloon, Hong Kong, Peoples R China Peking Univ, Minist Educ, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China
- [8] Charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 2187 - 2194Liu, Feng论文数: 0 引用数: 0 h-index: 0机构: TSRC, ULTRAS Team, Beijing 100871, Peoples R China Peking Univ, Sch Elect Engn & Comp Sci, Inst Microelect, Beijing 100871, Peoples R China Peking Univ, Sch Elect Engn & Comp Sci, Inst Microelect, Beijing 100871, Peoples R China TSRC, ULTRAS Team, Beijing 100871, Peoples R ChinaHe, Jin论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Shenzhen 518055, Peoples R China TSRC, ULTRAS Team, Beijing 100871, Peoples R ChinaZhang, Lining论文数: 0 引用数: 0 h-index: 0机构: TSRC, ULTRAS Team, Beijing 100871, Peoples R ChinaZhang, Jian论文数: 0 引用数: 0 h-index: 0机构: TSRC, ULTRAS Team, Beijing 100871, Peoples R ChinaHu, Jinghua论文数: 0 引用数: 0 h-index: 0机构: TSRC, ULTRAS Team, Beijing 100871, Peoples R China Peking Univ, Sch Elect Engn & Comp Sci, Inst Microelect, Beijing 100871, Peoples R China Peking Univ, Sch Elect Engn & Comp Sci, Inst Microelect, Beijing 100871, Peoples R China TSRC, ULTRAS Team, Beijing 100871, Peoples R ChinaMa, Chenyue论文数: 0 引用数: 0 h-index: 0机构: TSRC, ULTRAS Team, Beijing 100871, Peoples R ChinaChan, Mansun论文数: 0 引用数: 0 h-index: 0机构: Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China TSRC, ULTRAS Team, Beijing 100871, Peoples R China
- [9] Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications[J]. SOLID-STATE ELECTRONICS, 2007, 51 (05) : 655 - 661Moldovan, Oana论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, SpainCerdeira, Antonio论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, SpainJimenez, David论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, SpainRaskin, Jean-Pierre论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, SpainKilchytska, Valeria论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, SpainFlandre, Denis论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, SpainCollaert, Nadine论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, SpainIniguez, Benjamin论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, Spain Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, Spain
- [10] Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (01) : 162 - 165Moldovan, Oana论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, E-43007 Tarragona, Spain Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, E-43007 Tarragona, SpainIniguez, Benjamin论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, E-43007 Tarragona, SpainJimenez, David论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, E-43007 Tarragona, SpainRoig, Jaume论文数: 0 引用数: 0 h-index: 0机构: Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, E-43007 Tarragona, Spain