Compact model for long-channel cylindrical surrounding-gate MOSFETs valid from low to high doping concentrations

被引:14
作者
Cheralathan, M. [1 ]
Cerdeira, A. [2 ]
Iniguez, B. [1 ]
机构
[1] Univ Rovira & Virgili, DEEEA, Tarragona 43007, Spain
[2] CINVESTAV IPN, SEES, Mexico City, DF, Mexico
关键词
Surrounding-gate (SRG) MOSFET; Compact modeling; CHARGE; VOLTAGE;
D O I
10.1016/j.sse.2010.08.015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a compact model for the electrostatic potentials and the current characteristics of doped long-channel cylindrical surrounding-gate (SRG) MOSFETs. An analytical expression of the potentials is derived as a function of doping concentration. Then, the mobile charge density is calculated using the analytical expressions of the surface potential at the surface and the difference of potentials between the surface and the center of the silicon doped layer. Using the expression obtained for the mobile charge, a drain current expression is derived. Comparisons of the modeled expressions with the simulated characteristics obtained from the 3D ATLAS device simulator for the transfer characteristics, as well for the output characteristics, show good agreement within the practical range of gate and drain voltages and for doping concentrations ranging from 10(16) cm(-3) to 5 x 10(18) cm(-3). (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:13 / 18
页数:6
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