The effects of chloromethane on diamond nucleation and growth in a hot-filament chemical vapor deposition reactor

被引:6
作者
Wu, JJ [1 ]
Hong, FCN [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 701, Taiwan
关键词
D O I
10.1557/JMR.1998.0349
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of chloromethane on diamond nucleation and growth were studied by employing laser reflective interferometry. Chloromethane enhances the film-growth rate only slightly compared to methane. However, chloromethane greatly enhances the nucleation density and shortens the him-forming stage, more significantly at a lower temperature. Thus, chloromethane facilitates the low temperature growth mainly through the enhancement of nucleation. Nucleation density is strongly dependent on the compositions of H atoms and carbon species prior to diamond growth. The residual diamond seeds by diamond-grit scratching are suggested to be the major nucleation sites. Chloromethane can enhance diamond nucleation by protecting the residual seeds from being etched by H atoms.
引用
收藏
页码:2498 / 2504
页数:7
相关论文
共 28 条
[1]   METHYL HALIDES AS CARBON-SOURCES IN A HOT-FILAMENT DIAMOND CVD REACTOR - A NEW GAS-PHASE GROWTH SPECIES [J].
BAI, BJ ;
CHU, CJ ;
PATTERSON, DE ;
HAUGE, RH ;
MARGRAVE, JL .
JOURNAL OF MATERIALS RESEARCH, 1993, 8 (02) :233-236
[2]   SPATIALLY-RESOLVED ATOMIC-HYDROGEN CONCENTRATIONS AND MOLECULAR-HYDROGEN TEMPERATURE PROFILES IN THE CHEMICAL-VAPOR-DEPOSITION OF DIAMOND [J].
CONNELL, LL ;
FLEMING, JW ;
CHU, HN ;
VESTYCK, DJ ;
JENSEN, E ;
BUTLER, JE .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :3622-3634
[3]   TEMPERATURE-DEPENDENCE OF SPECIES CONCENTRATIONS NEAR THE SUBSTRATE DURING DIAMOND CHEMICAL-VAPOR-DEPOSITION [J].
CORAT, EJ ;
GOODWIN, DG .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) :2021-2029
[4]   DIAMOND DEPOSITION FROM FLUORINATED PRECURSORS USING MICROWAVE-PLASMA CHEMICAL-VAPOR-DEPOSITION [J].
FOX, CA ;
MCMASTER, MC ;
HSU, WL ;
KELLY, MA ;
HAGSTROM, SB .
APPLIED PHYSICS LETTERS, 1995, 67 (16) :2379-2381
[5]   HALOGENATION OF DIAMOND (100) AND (111) SURFACES BY ATOMIC-BEAMS [J].
FREEDMAN, A .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (06) :3112-3120
[6]  
HONG FCN, 1993, APPL PHYS LETT, V63, P3149, DOI 10.1063/1.110231
[7]   LOW-TEMPERATURE DEPOSITION OF DIAMOND USING CHLOROMETHANE IN A HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION REACTOR [J].
HONG, FCN ;
HSIEH, JC ;
WU, JJ ;
LIANG, GT ;
HWANG, JH .
DIAMOND AND RELATED MATERIALS, 1993, 2 (2-4) :365-372
[8]  
HONG FCN, 1991, MATER SCI MONOG, V73, P577
[9]  
HONG FCN, 1994, ADV NEW DIAMOND SCI, P23
[10]  
HONG FCN, 1994, ADV NEW DIAMOND SCI, P85