Dielectric properties of Mg-doped Ba0.6Sr0.4TiO3 ceramic sintered at a low temperature with Li2O additve

被引:6
作者
Chou, Xiujian [1 ]
Zhai, Jiwei [1 ]
Sun, Jianying [1 ]
Yao, Xi [1 ]
机构
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
关键词
barium strontium titanium; doping; low-temperature sintering; dielectric properties; tunability; MICROSTRUCTURE;
D O I
10.1080/00150190701508845
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dielectric properties of Mg-doped Ba0.6Sr0.4TiO3 ceramics with the aid of Li2O have been investigated. 3.0wt% Li2O additive samples can be sintered at 900 degrees C for 4h and sintering temperature remarkably decrease. Phase and microstructure of these samples were analyzed using XRD and SEM. Results show no obvious secondary phase and decreased grain-size as MgO content increased. Dielectric constant is decreased and the Curie temperature is shifted to low temperature and the peaks are suppressed and broaden with the increase of MgO. Tunability is decreased from about 30% to 15% with MgO content increasing from 0.15wt% to 5.0wt% under applied electric field of 40 kV/cm.
引用
收藏
页码:305 / 310
页数:6
相关论文
共 11 条
[1]   Microwave dielectric properties of glass-ceramic composites for low temperature co-firable ceramics [J].
Cheng, CC ;
Hsieh, TE ;
Lin, IN .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2003, 23 (14) :2553-2558
[2]   The effect of Mn on the microstructure and properties of BaSrTiO3 with B2O3-Li2CO3 [J].
Hu, T ;
Price, TJ ;
Iddles, DM ;
Uusimäki, A ;
Jantunen, H .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2005, 25 (12) :2531-2535
[3]   Ba0.7Sr0.3powders with B2O3 additive prepared by the sol-gel method for use as-microwave material [J].
Hu, T ;
Jantunen, H ;
Uusimäki, A ;
Leppävuori, S .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2002, 5 (2-3) :215-221
[4]   Microstructure and dielectric properties of barium-strontium titanate with a functionally graded structure [J].
Jeon, JH ;
Hahn, YD ;
Kim, HD .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2001, 21 (10-11) :1653-1656
[5]   High-tunability and low-microwave-loss Ba0.6Sr0.4TiO3 thin films grown on high-resistivity Si substrates using TiO2 buffer layers -: art. no. 212903 [J].
Kim, HS ;
Kim, HG ;
Kim, ID ;
Kim, KB ;
Lee, JC .
APPLIED PHYSICS LETTERS, 2005, 87 (21) :1-3
[6]  
SENGUPTA, 1995, Patent No. 5427988
[7]   Low-temperature sintering of (Ba0.6Sr0.4)TiO3 [J].
Valant, M ;
Suvorov, D .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2004, 87 (07) :1222-1226
[8]  
VLADIMIR O, 2006, J APPL PHYS, V99, P74104
[9]   Dielectric properties and microstructure of nano-MgO dispersed Ba0.3Sr0.7TiO3 thin films prepared by sputter deposition -: art. no. 014107 [J].
Wang, SF ;
Chu, JP ;
Lin, CC ;
Mahalingam, T .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (01)
[10]   Effects of La2O3 additions on properties of Ba0.6Sr0.4TiO3-MgO ceramics for phase shifter applications [J].
Wang, XH ;
Lu, WZ ;
Liu, J ;
Zhou, YL ;
Zhou, DX .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2006, 26 (10-11) :1981-1985