Study of the Impedance of the Bypassing Network of a Switching Cell - Influence of the Positioning of the Decoupling Capacitors

被引：0

作者：

Pascal, Yoann ^{[1
]}

Labrousse, Denis ^{[1
]}

Petit, Mickael ^{[1
]}

Costa, Francois ^{[2
]}

机构：

[1] CNAM, Lab SATIE, Paris, France

[2] UPEC, Lab SATIE, Creteil, France

来源：

2019 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP) | 2019年

关键词：

bypass; DC-link capacitor; decoupling; GaN transistor; high speed switching; overvoltage; switching cell; switching transient; PARASITIC ELEMENTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mechanisms responsible for ringing and oscillations in power converters at transistors turn-offs are, first, studied using small signal modelling. It is explained why a 50 % derating must be applied to high-speed transistors. Experimental measurements validate the analytical predictions. The influence of the distance between a switching cell and its decoupling capacitors is then studied; it appears that using a low-inductance - though simple - layout results in a stray inductance as low as 11 nH when the capacitor is 30 cm away from the switching cell, enabling degrees of freedom for thermal management.

引用

页码：120 / 124

页数：5