Study of the Impedance of the Bypassing Network of a Switching Cell - Influence of the Positioning of the Decoupling Capacitors

被引:0
|
作者
Pascal, Yoann [1 ]
Labrousse, Denis [1 ]
Petit, Mickael [1 ]
Costa, Francois [2 ]
机构
[1] CNAM, Lab SATIE, Paris, France
[2] UPEC, Lab SATIE, Creteil, France
来源
2019 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP) | 2019年
关键词
bypass; DC-link capacitor; decoupling; GaN transistor; high speed switching; overvoltage; switching cell; switching transient; PARASITIC ELEMENTS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Mechanisms responsible for ringing and oscillations in power converters at transistors turn-offs are, first, studied using small signal modelling. It is explained why a 50 % derating must be applied to high-speed transistors. Experimental measurements validate the analytical predictions. The influence of the distance between a switching cell and its decoupling capacitors is then studied; it appears that using a low-inductance - though simple - layout results in a stray inductance as low as 11 nH when the capacitor is 30 cm away from the switching cell, enabling degrees of freedom for thermal management.
引用
收藏
页码:120 / 124
页数:5
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