Rapid mitigation of carrier-induced degradation in commercial silicon solar cells

被引：28

作者：

Hallam, Brett J. ^{[1
]}

Chan, Catherine E. ^{[1
]}

Chen, Ran ^{[1
]}

Wang, Sisi ^{[1
]}

Ji, Jingjia ^{[1
]}

Mai, Ly ^{[1
]}

Abbott, Malcolm D. ^{[1
]}

Payne, David N. R. ^{[1
]}

Kim, Moonyong ^{[1
]}

Chen, Daniel ^{[1
]}

Chong, CheeMun ^{[1
]}

Wenham, Stuart R. ^{[1
]}

机构：

[1] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 08期

关键词：

LIGHT-INDUCED DEGRADATION; CRYSTALLINE SILICON; CZOCHRALSKI GROWTH; PASSIVATION; DEFECTS; COMPLEX;

D O I：

10.7567/JJAP.56.08MB13

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the progress for the understanding of carrier-induced degradation (CID) in p-type mono and multi-crystalline silicon (mc-Si) solar cells, and methods of mitigation. Defect formation is a key aspect to mitigating CID. Illuminated annealing can be used for both mono and mc-Si solar cells to reduce CID. The latest results of an 8-s UNSW advanced hydrogenation process applied to industrial p-type Czochralski PERC solar cells are shown with average efficiency enhancements of 1.1% absolute from eight different solar cell manufacturers. Results from three new industrial CID mitigation tools are presented, reducing CID to 0.8-1.1% relative, compared to 4.2% relative on control cells. Similar advanced hydrogenation processes can also be applied to multi-crystalline silicon passivated emitter with rear local contact (PERC) cells, however to date, the processes take longer and are less effective. Modifications to the firing processes can also suppress CID in multi-crystalline cells during subsequent illumination. The most stable results are achieved with a multi-stage process consisting of a second firing process at a reduced firing temperature, followed by extended illuminated annealing. (C) 2017 The Japan Society of Applied Physics

引用

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