Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate

被引:19
|
作者
Buljan, M. [1 ]
Grenzer, J. [2 ]
Holy, V. [3 ]
Radic, N. [1 ]
Misic-Radic, T. [1 ]
Levichev, S. [4 ]
Bernstorff, S. [5 ]
Pivac, B. [1 ]
Capan, I. [1 ]
机构
[1] Rudjer Boskovic Inst, Zagreb 10000, Croatia
[2] Forschungszentrum Dresden Rossendorf, D-01314 Dresden, Germany
[3] Charles Univ Prague, Prague 12116, Czech Republic
[4] Univ Minho, P-4710057 Braga, Portugal
[5] Sincrotrone Trieste, I-34012 Basovizza, Italy
关键词
SILICON NANOCRYSTALS;
D O I
10.1063/1.3504249
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on structural properties and charge trapping in [(Ge+SiO2)/SiO2]x2 films deposited by magnetron sputtering on a periodically corrugated-rippled substrate and annealed in vacuum and forming gas. The rippled substrate caused a self-ordered growth of Ge quantum dots, while annealing in different environments enabled us to separate charge trapping in quantum dots from the trapping at the dot-matrix and matrix-substrate interfaces. We show that the charge trapping occurs mainly in Ge quantum dots in the films annealed in the forming gas, while Si-SiO2 interface trapping is dominant for the vacuum annealed films. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3504249]
引用
收藏
页数:3
相关论文
共 50 条
  • [41] Charge trapping in light-emitting SiO2 layers implanted with Ge+ ions
    Gebel, T
    Rebohle, L
    Skorupa, W
    Nazarov, AN
    Osiyuk, IN
    Lysenko, VS
    APPLIED PHYSICS LETTERS, 2002, 81 (14) : 2575 - 2577
  • [42] Enhanced ultraviolet photoluminescence from SiO2/Ge:SiO2/SiO2 sandwiched structure
    Shen, JK
    Wu, XL
    Yuan, RK
    Tang, N
    Zou, JP
    Mei, YF
    Tan, C
    Bao, XM
    Siu, GG
    APPLIED PHYSICS LETTERS, 2000, 77 (20) : 3134 - 3136
  • [43] Structural characterization of radiofrequency magnetron sputter deposited SiO2 thin films
    Natl. Inst. of Mat. and Chem. Res., Tsukuba, Ibaraki 305-8565, Japan
    J Phys D, 12 (1287-1292):
  • [44] Structural characterization of radiofrequency magnetron sputter deposited SiO2 thin films
    Li, BQ
    Fujimoto, T
    Kojima, I
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1999, 32 (12) : 1287 - 1292
  • [45] Nanotribological properties and scratch resistance of MoS2 bilayer on a SiO2/Si substrate
    KIM, Si-hwan
    AHN, Hyo-sok
    FRICTION, 2023, 11 (01) : 154 - 164
  • [46] Nanotribological properties and scratch resistance of MoS2 bilayer on a SiO2/Si substrate
    Si-hwan Kim
    Hyo-sok Ahn
    Friction, 2023, 11 : 154 - 164
  • [47] Substrate Effects on the Microstructure and Mechanical Properties of SiO2 Thin Films
    Wang He
    He Hong-Bo
    Zhang Wei-Li
    JOURNAL OF INORGANIC MATERIALS, 2013, 28 (06) : 653 - 658
  • [48] EFFECT OF GROWN-IN NA ON CHARGE TRAPPING IN SIO2 THIN-FILMS
    BUTLER, SR
    OTA, Y
    FEIGL, FJ
    DIMARIA, DJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : C250 - C250
  • [49] Tetraethylorthosilicate SiO2 films deposited at a low temperature
    da Silva, ANR
    Morimoto, NI
    Bonnaud, O
    MICROELECTRONICS RELIABILITY, 2000, 40 (4-5) : 621 - 624
  • [50] IONIC INSTABILITIES IN PYROLYTICALLY DEPOSITED SIO2 FILMS
    DUNBAR, PM
    HAUSER, JR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) : 674 - +