Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

被引:13
作者
Peng, Wenbing [1 ,2 ]
Wang, Haolin [1 ,2 ]
Lu, Hui [3 ]
Yin, Lei [1 ,2 ]
Wang, Yue [1 ,2 ]
Grandidier, Bruno [4 ]
Yang, Deren [1 ,2 ,3 ]
Pi, Xiaodong [1 ,2 ,3 ]
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
[3] Zhejiang Univ, Hangzhou Innovat Ctr, Inst Adv Semicond, Hangzhou 311215, Zhejiang, Peoples R China
[4] Univ Lille, Univ Polytech Hauts France, Junia ISEN, CNRS,Cent Lille,UMR 8520 IEMN, F-59000 Lille, France
关键词
band alignment; interface; scanning tunneling microscopy; scanning tunneling spectroscopy; semiconductor heterojunctions; TRANSITION-METAL DICHALCOGENIDES; SILICON QUANTUM DOTS; BAND-STRUCTURE; WORK FUNCTION; ELECTRONIC-STRUCTURE; SYNAPTIC DEVICES; INDIRECT-GAP; SOLAR-CELLS; CONTACTS; STRAIN;
D O I
10.1002/smll.202100655
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The band alignment, interface states, interface coupling, and carrier transport of semiconductor heterojunctions (SHs) need to be well understood for the design and fabrication of various important semiconductor structures and devices. Scanning tunneling microscopy (STM) with high spatial resolution and scanning tunneling spectroscopy (STS) with high energy resolution are significantly contributing to the understanding on the important properties of SHs. In this work, the recent progress on the use of STM and STS to study lateral, vertical and bulk SHs is reviewed. The spatial structures of SHs with atomically flat surface have been examined with STM. The electronic band structures (e. g., the band offset, interface state, and space charge region) of SHs are measured with STS. Combined with the spatial structures and the tunneling spectra features, the mechanism for the carrier transport in the SH may be proposed.
引用
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页数:17
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