Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement

被引：9

作者：

Sakharov, AV ^{[1
]}

Ivanov, SV ^{[1
]}

Sorokin, SV ^{[1
]}

Krestnikov, IL ^{[1
]}

Volovik, BV ^{[1
]}

Ledentsov, NN ^{[1
]}

Kop'ev, PS ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 04期

关键词：

D O I：

10.1134/1.1261822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It has been shown that lasing may be achieved in structures with submonolayer CdSe inclusions in a ZnMgSSe matrix at above-room temperatures without additional optical confinement of the active region by thick layers of lower refractive index. The temperature dependence of the excitation density at the lasing threshold is typical of structures with three-dimensional carrier localization. (C) 1997 American Institute of Physics. [S1063-7850(97)02104-6].

引用

页码：305 / 306

页数：2

共 6 条

[1] Composition, stoichiometry and growth rate control in molecular beam epitaxy of ZnSe based ternary and quaternary alloys [J].

Ivanov, SV ;

Sorokin, SV ;

Kopev, PS ;

Kim, JR ;

Jung, HD ;

Park, HS .

JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :16-20

[2] EXCITON-RELATED LASING MECHANISM IN ZNSE-(ZN,CD)SE MULTIPLE-QUANTUM WELLS [J].

KAWAKAMI, Y ;

HAUKSSON, I ;

STEWART, H ;

SIMPSON, J ;

GALBRAITH, I ;

PRIOR, KA ;

CAVENETT, BC .

PHYSICAL REVIEW B, 1993, 48 (16) :11994-12000

[3] Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement [J].

Krestnikov, IL ;

Ledentsov, NN ;

Maksimov, MV ;

Sakharov, AV ;

Ivanov, SV ;

Sorokin, SV ;

Tenishev, LN ;

Kop'ev, PS ;

Alferov, ZI .

TECHNICAL PHYSICS LETTERS, 1997, 23 (01) :23-25

[4] Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix [J].

Ledentsov, NN ;

Krestnikov, IL ;

Maximov, MV ;

Ivanov, SV ;

Sorokin, SL ;

Kopev, PS ;

Alferov, ZI ;

Bimberg, D ;

Torres, CMS .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1343-1345

[5] HOT EXCITONS IN SEMICONDUCTORS [J].

PERMOGOROV, S .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1975, 68 (01) :9-42

[6]

ZHUKOV AE, 1997, IN PRESS FIZ TEKH PO

← 1 →