Atomistic simulation of ion implantation into 2D structures

被引：3
|
作者：
Schmidt, B
Posselt, M
Strecker, N
Feudel, T
机构：
[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[2] ETH Zurich, Integrated Syst Lab, CH-8092 Zurich, Switzerland
[3] ISE Integrated Syst Engn, CH-8005 Zurich, Switzerland
来源：
COMPUTATIONAL MATERIALS SCIENCE | 1998年 / 11卷 / 02期
关键词：
atomistic simulation; ion implantation; 2D structures;
D O I：
10.1016/S0927-0256(97)00203-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The successful integration of the binary collision code Crystal-TRIM into the 2D-process simulator DIGS as an optional module is reported. The new module is applied to the simulation of the formation of LDD-like structures. The use of a trajectory split method in combination with a mechanism for the lateral duplication of ion trajectories enables the simulation of the implantation step in extended targets with good depth and lateral resolution within reasonable computation times. (C) 1998 Elsevier Science B.V.
引用
收藏
页码：87 / 95
页数：9
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