II-VI semiconductor color converters for efficient green, yellow, and red light emitting diodes

被引：21

作者：

Haase, M. A. ^{[1
]}

Xie, J. ^{[1
]}

Ballen, T. A. ^{[1
]}

Zhang, J. ^{[1
]}

Hao, B. ^{[1
]}

Yang, Z. H. ^{[1
]}

Miller, T. J. ^{[1
]}

Sun, X. ^{[1
]}

Smith, T. L. ^{[1
]}

Leatherdale, C. A. ^{[1
]}

机构：

[1] 3M Co, St Paul, MN 55144 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 23期

关键词：

INP;

D O I：

10.1063/1.3453447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

II-VI compound semiconductor quantum-well heterostructures were fabricated for use as efficient, narrow-spectrum, photoluminescent color converters to generate green, yellow, or red light when photopumped with blue GaInN light emitting diodes (LEDs). This approach promises high efficiencies in a wide range of wavelengths that includes the green-yellow portion of the spectrum where conventional LEDs offer relatively low efficiency. External quantum conversion efficiencies of 60%-70% and output spectra with full width at half maximum of 15 nm were achieved using CdZnSe-CdMgZnSe quantum wells grown by molecular beam epitaxy on InP substrates. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3453447]

引用

收藏

页数：3

相关论文

共 11 条

[1] ZnCdSe/ZnCdMgSe quantum wells on InP substrates for visible emitters [J].

Cavus, A ;

Zeng, L ;

Tamargo, MC ;

Bambha, N ;

Semendy, F ;

Gray, A .

APPLIED PHYSICS LETTERS, 1996, 68 (24) :3446-3448

[2] Selective wet-etching of InGaAs on InAlAs using adipic acid and its application to InAlAs/InGaAs HEMTs [J].

Higuchi, K ;

Uchiyama, H ;

Shiota, T ;

Kudo, M ;

Mishima, T .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (04) :475-480

[3] Origin of efficiency droop in GaN-based light-emitting diodes [J].

Kim, Min-Ho ;

Schubert, Martin F. ;

Dai, Qi ;

Kim, Jong Kyu ;

Schubert, E. Fred ;

Piprek, Joachim ;

Park, Yongjo .

APPLIED PHYSICS LETTERS, 2007, 91 (18)

[4] Status and future of high-power light-emitting diodes for solid-state lighting [J].

Krames, Michael R. ;

Shchekin, Oleg B. ;

Mueller-Mach, Regina ;

Mueller, Gerd O. ;

Zhou, Ling ;

Harbers, Gerard ;

Craford, M. George .

JOURNAL OF DISPLAY TECHNOLOGY, 2007, 3 (02) :160-175

[5] p-type doping of (Zn,Mg,Cd)Se alloys using a radio frequency discharge nitrogen plasma source [J].

Lin, W ;

Guo, SP ;

Tamargo, MC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1534-1537

[6] Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates [J].

Morita, T ;

Kikuchi, K ;

Nomura, I ;

Kishino, K .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (03) :425-430

[7] New developments in green LEDs [J].

Peter, Matthias ;

Laubsch, Ansgar ;

Bergbauer, Werner ;

Meyer, Tobias ;

Sabathil, Matthias ;

Baur, Johannes ;

Hahn, Berthold .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (06) :1125-1129

[8] 30-PERCENT EXTERNAL QUANTUM EFFICIENCY FROM SURFACE TEXTURED, THIN-FILM LIGHT-EMITTING-DIODES [J].

SCHNITZER, I ;

YABLONOVITCH, E ;

CANEAU, C ;

GMITTER, TJ ;

SCHERER, A .

APPLIED PHYSICS LETTERS, 1993, 63 (16) :2174-2176

[9] High performance thin-film flip-chip InGaN-GaN light-emitting diodes [J].

Shchekin, O. B. ;

Epler, J. E. ;

Trottier, T. A. ;

Margalith, T. ;

Steigerwald, D. A. ;

Holcomb, M. O. ;

Martin, P. S. ;

Krames, M. R. .

APPLIED PHYSICS LETTERS, 2006, 89 (07)

[10] Auger recombination in InGaN measured by photoluminescence [J].

Shen, Y. C. ;

Mueller, G. O. ;

Watanabe, S. ;

Gardner, N. F. ;

Munkholm, A. ;

Krames, M. R. .

APPLIED PHYSICS LETTERS, 2007, 91 (14)