Molecular-dynamics simulations of nucleation and growth of crystalline Si films during ELA processes

Initial stage of the nucleation and growth of crystallizing Si in a rapid cooling process like ELA is discussed by using molecular-dynamics simulations. A new simulation technique is introduced to exclude artificial temperature control and to realize pseudo-natural cooling conditions, which enables us to visualize the behavior of Si atoms under a more natural condition. Based on a statistical analysis of the atomic movements, it is suggested that Si nucleation and growth occur in an amorphous-like or a low-density liquid phase rather than the supercooled liquid as has been generally accepted so far.