Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition

被引：8
|
作者：
Hong-Quan Nguyen [1 ]
Chang, Edward Yi [1 ,2 ]
Yu, Hung-Wei [1 ]
Hai-Dang Trinh [1 ]
Dee, Chang-Fu [1 ]
Wong, Yuen-Yee [1 ]
Hsu, Ching-Hsiang [1 ]
Binh-Tinh Tran [1 ]
Chung, Chen-Chen [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 05期
关键词：
STRAIN RELAXATION; EPITAXIAL-GROWTH; BUFFER LAYERS; MULTILAYERS; REDUCTION; LASERS;
D O I：
10.1143/APEX.5.055503
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High quality In0.3Ga0.7As and In0.51Ga0.49As epilayers have been successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by transmission electron microscopy showed that the threading dislocations (TDs) have been successfully contained and limited within the buffer layers designed to stop the elongation of TDs into the In0.3Ga0.7As and In0.51Ga0.49As epilayers. A TD density of 1 x 10(6) cm(-2) in a fully relaxed In0.51Ga0.49As epilayer was achieved. The measurement of lifetimes of n- and p-type In0.51Ga0.49As has been done by using time-resolved photoluminescence. A great reduction in the number of recombination centers in the InGaAs epilayer has been shown. (c) 2012 The Japan Society of Applied Physics
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页数：3
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