Effects in carrier dynamics of Isolectronic In doped in GaN films grown by metalorganic vapor phase epitaxy

被引：0

作者：

Huang, HY ^{[1
]}

Shu, CK ^{[1
]}

Lin, WC ^{[1
]}

Liao, KC ^{[1
]}

Chuang, CH ^{[1
]}

Lee, MC ^{[1
]}

Chen, WH ^{[1
]}

Chen, WK ^{[1
]}

Lee, YY ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷

关键词：

GaN; recombination life time; isoelectronic doping;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-resolved photoluminescence spectra were used to characterize isoelectronically doped GaN:In films. Our results indicate that the recombination lifetime of donor-bound-exciton transition of pure GaN exhibits strong dependence on temperature. When In is doped into GaN, the recombination lifetime decreases sharply from 68 ps to 30 ps, irregardless of measured temperature and In doping concentration. The cause for this appearance is not clear at present. It might be related to the isoelectronic In impurity itself in GaN, which creates shallow energy levels that predominate the recombination process.

引用

页码：610 / 613

页数：4

共 15 条

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