Surface roughness scattering model for arbitrarily oriented silicon nanowires

被引：22

作者：

Tienda-Luna, Isabel M. ^{[1
]}

Ruiz, F. G. ^{[1
]}

Godoy, A. ^{[1
]}

Biel, B. ^{[1
]}

Gamiz, F. ^{[1
]}

机构：

[1] Univ Granada, Fac Ciencias, Dept Elect & Tecnol Comp, E-18071 Granada, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 08期

关键词：

TRANSPORT-PROPERTIES; MOBILITY; MOSFETS;

D O I：

10.1063/1.3656026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an extension of the unscreened generalized Prange-Nee term used to calculate the surface roughness (SR) limited mobility in arbitrarily oriented square nanowires. The presence of non-diagonal terms in the effective mass tensor is responsible for an additional term not considered in previous studies. We assess the impact of such a modification on the SR limited mobility and on the total mobility (SR and phonon scattering are considered) for devices with different orientation and size. We show that this impact is more relevant for small devices, where the SR plays an important role, even at low inversion charge. (C) 2011 American Institute of Physics. [doi:10.1063/1.3656026]

引用

页数：6

共 26 条

[21]

Tachi K., 2009, P 2009 SIL NAN WORKS

[22] ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .1. EFFECTS OF SUBSTRATE IMPURITY CONCENTRATION [J].

TAKAGI, S ;

TORIUMI, A ;

IWASE, M ;

TANGO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) :2357-2362

[23] Modeling the equivalent oxide thickness of Surrounding Gate SOI devices with high-κ insulators [J].

Tienda-Luna, I. M. ;

Ruiz, F. J. Garcia ;

Donetti, L. ;

Godoy, A. ;

Gamiz, F. .

SOLID-STATE ELECTRONICS, 2008, 52 (12) :1854-1860

[24] Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs [J].

Toniutti, Paolo ;

Esseni, David ;

Palestri, Pierpaolo .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (11) :3074-3083

[25] On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors [J].

Wang, J ;

Rahman, A ;

Ghosh, A ;

Klimeck, G ;

Lundstrom, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (07) :1589-1595

[26] Experimental examination and physical understanding of the Coulomb scattering mobility in strained-Si nMOSFETs [J].

Weber, Olivier ;

Takagi, Shinichi .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (09) :2386-2396

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