Dielectric and infrared properties of TiO2 films containing anatase and rutile

被引：120
作者：
Busani, T
Devine, RAB
机构：
[1] AF Res Lab, Space Vehicles Directorate, Kirtland AFB, NM 87117 USA
[2] CNRS, LEMD, F-38042 Grenoble, France
[3] Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 08期
关键词：
D O I：
10.1088/0268-1242/20/8/043
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrical and optical properties of low-temperature, plasma enhanced chemical vapour deposited films of TiO2 have been studied; the source gases were TiCl4 and O-2. The amorphous, as-deposited films had a dielectric constant similar to 33 consistent with their measured density of 3.2 +/- 0.2 g cm(-3). Films deposited using a -41 V substrate bias contained the anatase phase and some rutile as evidenced from infrared spectroscopy and x-ray scattering. Annealing of these films at 600 degrees C resulted in a significant increase in the rutile content of the film.
引用
收藏
页码：870 / 875
页数：6
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