Dielectric and infrared properties of TiO2 films containing anatase and rutile

被引：120

作者：

Busani, T

Devine, RAB

机构：

[1] AF Res Lab, Space Vehicles Directorate, Kirtland AFB, NM 87117 USA

[2] CNRS, LEMD, F-38042 Grenoble, France

[3] Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 08期

关键词：

D O I：

10.1088/0268-1242/20/8/043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical and optical properties of low-temperature, plasma enhanced chemical vapour deposited films of TiO2 have been studied; the source gases were TiCl4 and O-2. The amorphous, as-deposited films had a dielectric constant similar to 33 consistent with their measured density of 3.2 +/- 0.2 g cm(-3). Films deposited using a -41 V substrate bias contained the anatase phase and some rutile as evidenced from infrared spectroscopy and x-ray scattering. Annealing of these films at 600 degrees C resulted in a significant increase in the rutile content of the film.

引用

页码：870 / 875

页数：6

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